Such as 1N5820, 1N5821, 1N5822,This series employs the Schottky Barrier principle in a large areametal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
No comments:
Post a Comment